Influence of annealing temperature on nanostructured thin films of tungsten trioxide
Identifieur interne : 000094 ( Main/Repository ); précédent : 000093; suivant : 000095Influence of annealing temperature on nanostructured thin films of tungsten trioxide
Auteurs : RBID : Pascal:14-0035843Descripteurs français
- Pascal (Inist)
- Effet température, Recuit, Epaisseur, Addition étain, Couche ITO, Revêtement, Dépôt sous vide, Vibration, Capteur optique, Capteur de gaz, Dispositif optoélectronique, Détecteur de gaz, Spectre absorption, Bande interdite, Température recuit, Photoluminescence, Lacune, Nanostructure, Couche mince, Tungstène, Oxyde d'indium, Matériau revêtu, Verre, Silicium, Oxygène, Matériau dopé, 6865, 8105K, 6322, 0707D, ITO, 7840R, 7867, Matériau nanostructuré.
- Wicri :
English descriptors
- KwdEn :
- Absorption spectrum, Annealing, Annealing temperature, Coated material, Coatings, Doped materials, Energy gap, Gas detector, Gas sensors, Glass, ITO layers, Indium oxide, Nanostructure, Nanostructured material, Optical sensor, Optoelectronic device, Oxygen, Photoluminescence, Silicon, Temperature effect, Thickness, Thin film, Tin addition, Tungsten, Vacancy, Vacuum deposition, Vibration.
Abstract
Tungsten trioxide thin films of ˜300 nm thickness have been deposited on indium tin oxide coated glass and silicon substrates by thermal evaporation technique. Influence of annealing temperature on the structural, vibrational, morphological, optical and gas sensing properties of these films has been extensively studied to search out the possible applications in opto-electronic and gas sensing devices. From the studies of optical transmittance spectra it is observed that optical band gap decreases from 3.24 to 2.72 eV with increase in annealing temperature. It is also observed that because of annealing the photoluminescence yield of the films increases. All films, especially the annealed films have shown reasonably good gas sensing behavior in acetylene environment. The film annealed at 500 °C shows better optical as well as gas sensing behaviors and hence can have good device applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of annealing temperature on nanostructured thin films of tungsten trioxide</title><author><name sortKey="Kumar, Ashutosh" uniqKey="Kumar A">Ashutosh Kumar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Birla Institute of Technology, Mesra</s1><s2>Ranchi 835215, Jharkhand</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Ranchi 835215, Jharkhand</wicri:noRegion></affiliation></author><author><name sortKey="Keshri, Sunita" uniqKey="Keshri S">Sunita Keshri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Birla Institute of Technology, Mesra</s1><s2>Ranchi 835215, Jharkhand</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Ranchi 835215, Jharkhand</wicri:noRegion></affiliation></author><author><name sortKey="Kabiraj, Debulal" uniqKey="Kabiraj D">Debulal Kabiraj</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Inter University Accelerator Centre</s1><s2>New Delhi 110067</s2><s3>IND</s3><sZ>3 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Inter University Accelerator Centre</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0035843</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0035843 INIST</idno><idno type="RBID">Pascal:14-0035843</idno><idno type="wicri:Area/Main/Corpus">000206</idno><idno type="wicri:Area/Main/Repository">000094</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectrum</term><term>Annealing</term><term>Annealing temperature</term><term>Coated material</term><term>Coatings</term><term>Doped materials</term><term>Energy gap</term><term>Gas detector</term><term>Gas sensors</term><term>Glass</term><term>ITO layers</term><term>Indium oxide</term><term>Nanostructure</term><term>Nanostructured material</term><term>Optical sensor</term><term>Optoelectronic device</term><term>Oxygen</term><term>Photoluminescence</term><term>Silicon</term><term>Temperature effect</term><term>Thickness</term><term>Thin film</term><term>Tin addition</term><term>Tungsten</term><term>Vacancy</term><term>Vacuum deposition</term><term>Vibration</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Recuit</term><term>Epaisseur</term><term>Addition étain</term><term>Couche ITO</term><term>Revêtement</term><term>Dépôt sous vide</term><term>Vibration</term><term>Capteur optique</term><term>Capteur de gaz</term><term>Dispositif optoélectronique</term><term>Détecteur de gaz</term><term>Spectre absorption</term><term>Bande interdite</term><term>Température recuit</term><term>Photoluminescence</term><term>Lacune</term><term>Nanostructure</term><term>Couche mince</term><term>Tungstène</term><term>Oxyde d'indium</term><term>Matériau revêtu</term><term>Verre</term><term>Silicium</term><term>Oxygène</term><term>Matériau dopé</term><term>6865</term><term>8105K</term><term>6322</term><term>0707D</term><term>ITO</term><term>7840R</term><term>7867</term><term>Matériau nanostructuré</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Tungstène</term><term>Verre</term><term>Oxygène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Tungsten trioxide thin films of ˜300 nm thickness have been deposited on indium tin oxide coated glass and silicon substrates by thermal evaporation technique. Influence of annealing temperature on the structural, vibrational, morphological, optical and gas sensing properties of these films has been extensively studied to search out the possible applications in opto-electronic and gas sensing devices. From the studies of optical transmittance spectra it is observed that optical band gap decreases from 3.24 to 2.72 eV with increase in annealing temperature. It is also observed that because of annealing the photoluminescence yield of the films increases. All films, especially the annealed films have shown reasonably good gas sensing behavior in acetylene environment. The film annealed at 500 °C shows better optical as well as gas sensing behaviors and hence can have good device applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>17</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Influence of annealing temperature on nanostructured thin films of tungsten trioxide</s1></fA08><fA11 i1="01" i2="1"><s1>KUMAR (Ashutosh)</s1></fA11><fA11 i1="02" i2="1"><s1>KESHRI (Sunita)</s1></fA11><fA11 i1="03" i2="1"><s1>KABIRAJ (Debulal)</s1></fA11><fA14 i1="01"><s1>Department of Applied Physics, Birla Institute of Technology, Mesra</s1><s2>Ranchi 835215, Jharkhand</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Inter University Accelerator Centre</s1><s2>New Delhi 110067</s2><s3>IND</s3><sZ>3 aut.</sZ></fA14><fA20><s1>43-52</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000500729180080</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>50 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0035843</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Tungsten trioxide thin films of ˜300 nm thickness have been deposited on indium tin oxide coated glass and silicon substrates by thermal evaporation technique. Influence of annealing temperature on the structural, vibrational, morphological, optical and gas sensing properties of these films has been extensively studied to search out the possible applications in opto-electronic and gas sensing devices. From the studies of optical transmittance spectra it is observed that optical band gap decreases from 3.24 to 2.72 eV with increase in annealing temperature. It is also observed that because of annealing the photoluminescence yield of the films increases. All films, especially the annealed films have shown reasonably good gas sensing behavior in acetylene environment. 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